technische information / technical information igbt-module igbt-modules bsm 200 gb 60 dlc h?chstzul?ssige werte / maximum rated values elektrische eigenschaften / electrical properties kollektor-emitter-sperrspannung collector-emitter voltage v ces 600 v t c = 50c i c,nom. 200 a t c = 25c i c 230 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1ms, t c = 50c i crm 400 a gesamt-verlustleistung total power dissipation t c = 25c, transistor p tot 730 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v dauergleichstrom dc forward current i f 200 a periodischer spitzenstrom repetitive peak forw. current t p = 1ms i frm 400 a grenzlastintegral der diode i 2 t - value, diode v r = 0v, t p = 10ms, t vj = 125c i 2 t 4.050 a 2 s isolations-prfspannung insulation test voltage rms, f= 50hz, t= 1min. v isol 2,5 kv charakteristische werte / characteristic values transistor / transistor min. typ. max. i c = 200a, v ge = 15v, t vj = 25c - 1,95 2,45 v i c = 200a, v ge = 15v, t vj = 125c - 2,20 - v gate-schwellenspannung gate threshold voltage i c = 4,0ma, v ce = v ge , t vj = 25c v ge(th) 4,5 5,5 6,5 v eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v c ies -9-nf rckwirkungskapazit?t reverse transfer capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v c res - 0,8 - nf v ce = 600v, v ge = 0v, t vj = 25c - 1 500 a v ce = 600v, v ge = 0v, t vj = 125c -1-ma gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na prepared by: andreas vetter date of publication: 2000-04-26 approved by: michael hornkamp revision: 1 kollektor-dauergleichstrom dc-collector current v ce sat i ces kollektor-emitter s?ttigungsspannung collector-emitter saturation voltage kollektor-emitter reststrom collector-emitter cut-off current 1 (8) bsm 200 gb 60 dlc 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 200 gb 60 dlc charakteristische werte / characteristic values transistor / transistor min. typ. max. i c = 200a, v cc = 300v v ge = 15v, r g = 1,5 ? , t vj = 25c t d,on - 163 - ns v ge = 15v, r g = 1,5 ? , t vj = 125c - 180 - ns i c = 200a, v cc = 300v v ge = 15v, r g = 1,5 ? , t vj = 25c t r -43-ns v ge = 15v, r g = 1,5 ? , t vj = 125c -49-ns i c = 200a, v cc = 300v v ge = 15v, r g = 1,5 ? , t vj = 25c t d,off - 253 - ns v ge = 15v, r g = 1,5 ? , t vj = 125c - 285 - ns i c = 200a, v cc = 300v v ge = 15v, r g = 1,5 ? , t vj = 25c t f -33-ns v ge = 15v, r g = 1,5 ? , t vj = 125c -41-ns i c = 200a, v cc = 300v, v ge = 15v r g = 1,5 ? , t vj = 125c, l = 15nh i c = 200a, v cc = 300v, v ge = 15v r g = 1,5 ? , t vj = 125c, l = 15nh t p 10sec, v ge 15v t vj 125c, v cc =360v, v cemax = v ces -l ce di/dt modulinduktivit?t stray inductance module l ce - 40 - nh modul-leitungswiderstand, anschlsse - chip lead resistance, terminals - chip t c = 25c r cc'+ee' - 0,9 - m ? charakteristische werte / characteristic values diode / diode min. typ. max. durchla?spannung i f = 200a, v ge = 0v, t vj = 25c - 1,25 1,6 v forward voltage i f = 200a, v ge = 0v, t vj = 125c - 1,20 - v i f = 200a, -di f /dt= 4000a/sec v r = 300v, v ge = -10v, t vj = 25c i rm - 154 - a v r = 300v, v ge = -10v, t vj = 125c - 188 - a i f = 200a, -di f /dt= 4000a/sec v r = 300v, v ge = -10v, t vj = 25c q r - 12,1 - c v r = 300v, v ge = -10v, t vj = 125c - 19,7 - c i f = 200a, -di f /dt= 4000a/sec v r = 300v, v ge = -10v, t vj = 25c e rec ---mj v r = 300v, v ge = -10v, t vj = 125c - 4,1 - mj abschaltenergie pro puls reverse recovery energy a v f rckstromspitze peak reverse recovery current sperrverz?gerungsladung recoverred charge i sc - 900 mj - 4,6 - mj - 6,3 - abschaltverlustenergie pro puls turn-off energy loss per pulse einschaltverz?gerungszeit (ind. last) turn on delay time (inductive load) anstiegszeit (induktive last) rise time (inductive load) abschaltverz?gerungszeit (ind. last) turn off delay time (inductive load) kurzschlu?verhalten sc data fallzeit (induktive last) fall time (inductive load) e off e on einschaltverlustenergie pro puls turn-on energy loss per pulse - 2 (8) bsm 200 gb 60 dlc 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 200 gb 60 dlc thermische eigenschaften / thermal properties min. typ. max. - - 0,17 k/w - - 0,29 k/w bergangs-w?rmewiderstand thermal resistance, case to heatsink pro modul / per module paste = 1w/m*k / grease = 1w/m*k r thck - 0,02 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj - - 150 c betriebstemperatur operation temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties 5nm -15 +15 % schraube m6 screw m6 m1 g 180 g mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belonging technical notes. r thjc innerer w?rmewiderstand thermal resistance, junction to case gewicht weight transistor / transistor, dc diode / diode, dc geh?use, siehe anlage case, see appendix innere isolation internal insulation anzugsdrehmoment fr mech. befestigung mounting torque cti comperative tracking index kriechstrecke creepage insulation luftstrecke clearance mm 8,5 mm 15 275 al 2 o 3 3 (8) bsm 200 gb 60 dlc 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 200 gb 60 dlc i c [a] v ce [v] i c [a] v ce [v] 0 50 100 150 200 250 300 350 400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 tvj = 25c tvj = 125c ausgangskennlinie (typisch) i c = f (v ce ) output characteristic (typical) v ge = 15v 0 50 100 150 200 250 300 350 400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 vge = 8v vge = 9v vge = 10v vge = 12v vge = 15v vge = 20v ausgangskennlinienfeld (typisch) i c = f (v ce ) output characteristic (typical) t vj = 125c 4 (8) bsm 200 gb 60 dlc 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 200 gb 60 dlc i c [a] v ge [v] i f [a] v f [v] 0 50 100 150 200 250 300 350 400 5 6 7 8 9 10 11 12 13 tvj = 25c tvj = 125c bertragungscharakteristik (typisch) i c = f (v ge ) transfer characteristic (typical) v ce = 20v 0 50 100 150 200 250 300 350 400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 tvj = 25c tvj = 125c durchla?kennlinie der inversdiode (typisch) i f = f (v f ) forward characteristic of inverse diode (typical) 5 (8) bsm 200 gb 60 dlc 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 200 gb 60 dlc e [mj] i c [a] e [mj] r g [ ? ? ? ? ] 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 eon eoff erec schaltverluste (typisch) e on = f (i c ), e off = f (i c ), e rec = f (i c ) switching losses (typical) r g,on = 1,5 ?, ?, ?, ?, = = = = r g,off = 1,5 ? ? ? ? , v cc = 300v, t vj = 125c 0 2 4 6 8 10 12 14 16 18 0246810121416 eon eoff erec schaltverluste (typisch) e on = f (r g ), e off = f (r g ), e rec = f (r g ) switching losses (typical) i c = 200a , v cc = 300v , t vj = 125c 6 (8) bsm 200 gb 60 dlc 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 200 gb 60 dlc z thjc [k / w] t [sec] i 1234 r i [k/kw] : igbt 7,2 89,1 59,9 13,8 i [sec] : igbt 0,0018 0,0240 0,0651 0,6626 r i [k/kw] : diode 102,2 98,0 61,6 28,2 i [sec] : diode 0,0487 0,0169 0,1069 0,9115 i c [a] v ce [v] sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge = +15v, r g,off = 1,5 ?, ?, ?, ?, t vj = 125c transienter w?rmewiderstand z thjc = f (t) transient thermal impedance 0 50 100 150 200 250 300 350 400 450 0 100 200 300 400 500 600 700 ic,modul ic,chip 0,001 0,01 0,1 1 0,001 0,01 0,1 1 10 zth:igbt zth:diode 7 (8) bsm 200 gb 60 dlc 2000-02-08
technische information / technical information igbt-module igbt-modules bsm 200 gb 60 dlc geh?usema?e / schaltbild package outline / circuit diagram 13 10 2,8 x 0,5 m5 6 17 23 17 80 94 6 23 6 7 3 5 4 1 2 123 7 6 5 4 8 (8) bsm 200 gb 60 dlc 2000-02-08
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